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XP1C301 - Silicon PNP(NPN) epitaxial planer transistor

Features

  • 1 2 3 5 4 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings.

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Datasheet Details

Part number XP1C301
Manufacturer Panasonic Semiconductor
File Size 56.42 KB
Description Silicon PNP(NPN) epitaxial planer transistor
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Full PDF Text Transcription

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Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For general amplification 0.65 0.65 q q Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 1 2 3 5 4 0.9± 0.
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