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XP4506 - Silicon NPN epitaxial planer transistor

Features

  • 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0 to 0.1 2SD1915F × 2 elements 0.7±0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 50 20 25 300 500 150 150.
  • 55 to +150 Unit V V V mA mA mW ˚C ˚C 1.

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Datasheet Details

Part number XP4506
Manufacturer Panasonic
File Size 33.24 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XP4506 Datasheet

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Full PDF Text Transcription

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Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.65 q q q High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0 to 0.1 2SD1915F × 2 elements 0.7±0.1 0.2±0.
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