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2SA1310 Datasheet PDF

Panasonic 2SA1310

Silicon PNP epitaxial planer type Transistor

Part No. 2SA1310
Datasheet 2SA1310 Download
Manufacturer
Panasonic
Description Silicon PNP epitaxial planer type Transistor
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2SA1310 datasheet page 1 preview

FEATURES

q q q q Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25˚C) Ratings –60 –55 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1.27 1.27 marking 1 2 3 +0.2 0.45–0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.15 EIAJ:SC–72 New S Type Package s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA...
2SA1310 page 2 preview