Panasonic 2SA1310
Silicon NPN epitaxial planer type Transistor
| Part No. | 2SA1310 |
|---|---|
| Datasheet | 2SA1310 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN epitaxial planer type Transistor |
| Buy | Stock & Price |
FEATURES
q q q q Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25˚C) Ratings –60 –55 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1.27 1.27 marking 1 2 3 +0.2 0.45–0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.15 EIAJ:SC–72 New S Type Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA...