Panasonic 2SA1762
Silicon PNP epitaxial planer type Transistor
FEATURES
q q 1.5 R0.9 R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.4 1.0±0.1 R 0. 0.85 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –80 –80 –5 –1 – 0.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 1.25±0.05 0.45±0.05 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2 1 2.5 2.5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequ...