Panasonic 2SA2079
Silicon PNP epitaxial planar type Power Transistors
FEATURES
High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package Package: 0.6 mm × 1.0 mm (hight 0.39 mm) ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg –45 –45 –7 –100 –200 100 125 –55 to +125 Unit V V V mA mA mW °C °C Unit: mm 0.15±0.05 0.05±0.03 0.35±0.01 32 0.60±0.05 1.00±0.05 1 0.39+−00..0013 0.25±0.05 0.25±0.05 1 0.50±0.05 32 0.65±0.01 0.05±0.03 1: Base 2: Emitter 3: Collector Marking Symbol : 3D ML3-N2 Package ELECTRICAL CHARACTERISTICS
Ta = 25°C±3°