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2SA2077 - Silicon PNP Transistor

Key Features

  • s.
  • High forward current transfer ratio hFE.
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEB.

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Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5845 ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg −45 −45 −7 −100 −200 200 150 −55 to +150 Unit V V V mA mA mW °C °C 0.40+–00..0150 3 Unit: mm 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 5˚ (0.65) 12 (0.95) (0.95) 1.