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2SA2046 - Silicon PNP epitaxial planer type Transistor

Key Features

  • 1 0.95 2 0.95 1.90±0.20 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • 2.90+0.20.
  • 0.05 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating.
  • 30.
  • 20.
  • 5.
  • 5.
  • 1.5 400 150.
  • 55 to +150 mm3 Unit V V V A A mW °C °C 10° 0 ∼ 0.1 1.10+0.20.
  • 0.10 0.

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Datasheet Details

Part number 2SA2046
Manufacturer Panasonic
File Size 381.78 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SA2046 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SA2046 Silicon PNP epitaxial planer type Unit: mm 0.40+0.10 −0.05 3 0.65±0.15 For DC-DC converter 1.45 0.16+0.10 −0.06 • Low collector to emitter saturation voltage VCE(sat) • Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 1.50+0.25 −0.05 +0.20 2.80− 0.30 I Features 1 0.95 2 0.95 1.90±0.20 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 2.90+0.20 −0.05 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −30 −20 −5 −5 −1.5 400 150 −55 to +150 mm3 Unit V V V A A mW °C °C 10° 0 ∼ 0.1 1.10+0.20 −0.10 0.65±0.