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2SB1193 - Silicon PNP Transistor

Datasheet Summary

Features

  • 7.5±0.2 φ 3.1±0.1 4.2±0.2 For midium-speed power switching Complementary to 2SD1773 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating.
  • 120.
  • 120.

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Datasheet Details

Part number 2SB1193
Manufacturer Panasonic
File Size 97.94 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB1193 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 ■ Features 7.5±0.2 φ 3.1±0.1 4.2±0.2 For midium-speed power switching Complementary to 2SD1773 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −120 −120 −7 −8 −12 50 2 150 −55 ∼ +150 °C °C Unit V V V A A W Solder Dip (4.0) 1.4±0.1 1.
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