Panasonic 2SB1193
Silicon PNP Transistor
FEATURES
7.5±0.2 φ 3.1±0.1 4.2±0.2 For midium-speed power switching Complementary to 2SD1773 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −120 −120 −7 −8 −12 50 2 150 −55 ∼ +150 °C °C Unit V V V A A W Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage * E Conditions Min −120 −7 −100 −10 1 000 20 000 −1.5 −3.0 −2.0 −3.5 15 0.7 3.5 2.0 MHz µs µs µs V Typ Max Unit V V µA µA V Symbol VCEO(SUS) IC = −2 A, L = 10 mH VEBO ICBO ICEO hFE VCE(sat)1 VCE(sat)2 VBE(sa...