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2SB1193 - PNP Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) Complement to Type 2SD1773 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for midium -speed po

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Datasheet Details

Part number 2SB1193
Manufacturer INCHANGE
File Size 211.55 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Complement to Type 2SD1773 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for midium -speed power switching applications.
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