High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Complement to Type 2SD1772 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
2SB1197K — SeCoS Halbleitertechnologie GmbH — Low Frequency Transistor
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy