Datasheet Details
| Part number | 2SB1192 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.19 KB |
| Description | PNP Transistor |
| Download | 2SB1192 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor 2SB1192.
| Part number | 2SB1192 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.19 KB |
| Description | PNP Transistor |
| Download | 2SB1192 Download (PDF) |
|
|
|
·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1772 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1192 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1190 | PNP Transistor |
| 2SB1193 | PNP Transistor |
| 2SB1194 | PNP Transistor |
| 2SB1101 | PNP Transistor |
| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |