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2SB1190 - PNP Transistor

Datasheet Summary

Description

High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Complement to Type 2SD1770 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

TV vertical deflection outpu

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Datasheet Details

Part number 2SB1190
Manufacturer INCHANGE
File Size 212.35 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1770 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 25 W 1.4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1190 isc website：www.iscsemi.
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