2SB1190
Overview
High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Complement to Type 2SD1770 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SB1190 |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 212.35 KB |