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2SB1194 - PNP Transistor

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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A) Complement to Type 2SD1633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier a

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Datasheet Details

Part number 2SB1194
Manufacturer INCHANGE
File Size 214.30 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor 2SB1194 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
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