Datasheet Details
| Part number | 2SB1194 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.30 KB |
| Description | PNP Transistor |
| Download | 2SB1194 Download (PDF) |
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| Part number | 2SB1194 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.30 KB |
| Description | PNP Transistor |
| Download | 2SB1194 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
isc Silicon PNP Darlington Power Transistor 2SB1194.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1194 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1190 | PNP Transistor |
| 2SB1192 | PNP Transistor |
| 2SB1193 | PNP Transistor |
| 2SB1101 | PNP Transistor |
| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |