2SB1207 Datasheet PDF

FEATURES

q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –15 –10 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V 1 2 3 1.27 1.27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC–72 New S Type Package s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE *1 Conditions VCB = –10V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –0.4A, IB = –8mA IC = –0.4A, IB = –8mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max –100 2.0±0.2 marking +0.2 0.45–0.1 s

ABSOLUTE MAXIMUM RATINGS

(Ta=25˚C) 15.6±0.5 Low collector to emitter saturation voltage VCE(sat).