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2SB1209 Datasheet PDF

Panasonic 2SB1209

Silicon PNP triple diffusion planer type Transistor

Part No. 2SB1209
Datasheet 2SB1209 Download
Manufacturer
Panasonic
Description Silicon PNP triple diffusion planer type Transistor
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2SB1209 datasheet page 1 preview

FEATURES

q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings –400 –400 –5 –200 –100 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s

ELECTRICAL CHARACTERISTICS

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance...
2SB1209 page 2 preview