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2SB1253 Datasheet PDF

Panasonic 2SB1253

Silicon PNP Transistor

Part No. 2SB1253
Datasheet 2SB1253 Download
Manufacturer
Panasonic
Description Silicon PNP Transistor
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2SB1253 datasheet page 1 preview

FEATURES

q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –130 –110 –5 –10 –6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s

ABSOLUTE MAXIMUM RATINGS

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) Internal Connection C B E s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter s...
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