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2SB1253 - PNP Transistor

General Description

High DC Current Gain- : hFE= 5000(Min)@IC= -5A Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A Complement to Type 2SD1893 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applicati

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.