Datasheet Details
| Part number | 2SB1253 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1253-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253.
| Part number | 2SB1253 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.46 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1253-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD1893 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -10 A 50 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1253 | Silicon PNP Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SB1254 | PNP Transistor |
| 2SB1255 | PNP Transistor |
| 2SB1258 | PNP Transistor |
| 2SB1259 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |