Download 2SB1253 Datasheet PDF
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Datasheet Summary

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor DESCRIPTION - High DC Current Gain- : hFE= 5000(Min)@IC= -5A - Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A - plement to Type 2SD1893 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for power amplifier...