High DC Current Gain-
: hFE= 5000(Min)@IC= -6A
Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A
Complement to Type 2SD1895
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier applicatio
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-12
A
100 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1255
isc website：www.iscsemi.
2SB1255 Datasheet
