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2SB1255 - PNP Transistor

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Description

High DC Current Gain- : hFE= 5000(Min)@IC= -6A Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A Complement to Type 2SD1895 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applicatio

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Datasheet Details

Part number 2SB1255
Manufacturer INCHANGE
File Size 213.48 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1255 isc website：www.iscsemi.
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