Datasheet Details
| Part number | 2SB1254 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1254-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor 2SB1254.
| Part number | 2SB1254 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1254-INCHANGE.pdf |
|
|
|
·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 70 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1254 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
IB= -6mA VBE(sat) Base-Emitter Saturation Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1254 | Silicon PNP Transistor | Panasonic Semiconductor |
 |
2SB1254 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1253 | PNP Transistor |
| 2SB1255 | PNP Transistor |
| 2SB1258 | PNP Transistor |
| 2SB1259 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |