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2SB1258 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 1000(Min)@IC= -3A Complement to Type 2SD1785 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid, relay and motor and gene

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Datasheet Details

Part number 2SB1258
Manufacturer INCHANGE
File Size 204.26 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -3A ·Complement to Type 2SD1785 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid, relay and motor and general purpose applications.
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