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2SB1259 - PNP Transistor

General Description

High DC Current Gain- : hFE= 2000(Min)@ (VCE= -4V, IC= -5A) Large Current Capability Complement to Type 2SD2081 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,relay and motor and general purpose applicatio

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isc Silicon PNP Darlington Power Transistor 2SB1259 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.