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2SB1361 Datasheet PDF

Panasonic 2SB1361

Silicon PNP Transistor

Part No. 2SB1361
Datasheet 2SB1361 Download
Manufacturer
Panasonic
Description Silicon PNP Transistor
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2SB1361 datasheet page 1 preview

FEATURES

15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s

ABSOLUTE MAXIMUM RATINGS

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = –150V, IE = 0 VEB = –3V, IC = 0 VCE = –5V, IC = –20mA VCE = –5V, IC = –1A VCE = –5V, IC = –7A VCE = –5V, IC = –7A IC = –7A, IB = – 0.7A VCE = –5V, IC = – 0.5A, f = 1MHz VCB = –10V, IE = 0, f = 1MHz 15 270 20 60 20 –1.8 –2.0 V V MHz pF 200 min typ max –50 –50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transiti...
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