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2SB767 Datasheet PDF

Panasonic 2SB767

Silicon PNP Transistor

Part No. 2SB767
Datasheet 2SB767 Download
Manufacturer
Panasonic
Description Silicon PNP Transistor
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2SB767 datasheet page 1 preview

FEATURES

q q q 4.5±0.1 1.6±0.2 1.5±0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –80 –80 –5 –1 – 0.5 * 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s

ABSOLUTE MAXIMUM RATINGS

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 2 1 marking EIAJ:SC–62 Mini Power Type Package 1 150 –55 ~ +150 1cm2 Marking symbol : C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Collector to base voltage Collector to em...
2SB767 page 2 preview