Panasonic 2SB774
Silicon PNP epitaxial planer type Transistor
FEATURES
q q 5.0±0.2 4.0±0.2 High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 5.1±0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob * Conditions VCB = –10V, IE = 0 VCE = –20V,...