Panasonic 2SC3312
Silicon NPN Transistor
| Part No. | 2SC3312 |
|---|---|
| Datasheet | 2SC3312 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
0.75 max.● Optimum for high-density mounting
● Allowing supply with the radial taping
● Low noise voltage NV
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 55 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 300 mW n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C 0.45+–00..1200 (2.5) (2.5) 123 0.45+–00..1200 0.7±0.1 1: Emitter 2: Collector 3: Base NS-B1 Package in n es follopwlianngefdoudriscontin●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 55 V M is iscon ainte...
