Panasonic 2SC3315
Silicon NPN Transistor
| Part No. | 2SC3315 |
|---|---|
| Datasheet | 2SC3315 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● Optimum for high-density mounting● Allowing supply with the radial taping 0.75 max.
● Optimum for RF amplification of FM/AM radios
● High transition frequency fT /
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 15 mA lifecy , dis Collector power dissipation PC 300 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 0.45+–00..1200 (2.5) (2.5) 123 0.45+–00..1200 0.7±0.1 1: Emitter 2: Collector 3: Base NS-B1 Package in n s followlianngefdoudriscontinu●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3...
