Panasonic 2SC3506
Silicon NPN Transistor
FEATURES
11.0±0.2 (3.2)● High-speed switching 21.0±0.5 15.0±0.2
● High collector-base voltage (Emitter open) VCBO φ 3.2±0.1
● Satisfactory linearity of forward current transfer ratio hFE
● Full-pack package which can be installed to the heat sink with one screw 2.0±0.2 2.0±0.1
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C 1.1±0.1 0.6±0.2 / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip e Collector-base voltage (Emitter open) VCBO 1 000 V c type) Collector-emitter voltage (E-B short) VCES 1 000 V n d ge. ed Collector-emitter voltage (Base open) VCEO 800 V le sta ntinu Emitter-base voltage (Collector open) VEBO 7 V a e cyc isco Collector current IC 3 A life d, d Base current IB 2 A n u duct type Peak collector current ICP 6 A te tin Pro ued Collector power dissipation PC 70 W four ntin Ta = 25°C 3.0 wing disco Junction temperature Tj 150 °C in n follo ed Storage temperature Tstg −55 to +150 °C a o includestype, plan●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C c ed ce Parameter Symbol Co...