High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1.
Wide safe oeration area.
Satisfactory linearity of forward current transfer ratio hFE.
Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
e Collector-base voltage (Emitter open) VCBO
900
V
pe) Collector-emitter voltage.
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Power Transistors
2SC4359
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
• High-speed switching
21.0±0.5 15.0±0.2
• High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
e Collector-base voltage (Emitter open) VCBO
900
V
pe) Collector-emitter voltage (E-B short) VCES
900
V
nc d ge.
2SC4359 Datasheet
