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2SC4359 Datasheet Silicon NPN Transistor

Manufacturer: Panasonic

Overview: Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching.

Key Features

  • s (0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2).
  • High-speed switching 21.0±0.5 15.0±0.2.
  • High collector-base voltage (Emitter open) VCBO φ 3.2±0.1.
  • Wide safe oeration area.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 e Collector-base voltage (Emitter open) VCBO 900 V pe) Collector-emitter voltage.

2SC4359 Distributor

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