Panasonic 2SC4359
Silicon NPN Transistor
| Part No. | 2SC4359 |
|---|---|
| Datasheet | 2SC4359 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
(0.7) 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2)● High-speed switching 21.0±0.5 15.0±0.2
● High collector-base voltage (Emitter open) VCBO φ 3.2±0.1
● Wide safe oeration area
● Satisfactory linearity of forward current transfer ratio hFE
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C / Parameter Symbol Rating Unit 16.2±0.5 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 e Collector-base voltage (Emitter open) VCBO 900 V pe) Collector-emitter voltage (E-B short) VCES 900 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 800 V sta tinu Emitter-base voltage (Collector open) VEBO 7 V a e cycle iscon Base current IB 1 A life d, d Collector current IC 3 A n u duct type Peak collector current ICP 5 A te tin Pro ed Collector power dissipation PC 70 W four ntinu Ta = 25°C 3.0 ing isco Junction temperature Tj 150 °C in n follow ed d Storage temperature Tstg −55 to +150 °C 5.45±0.3 10.9±0.5 123 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package a coed inclucdeestype, plan● El...
