Allowing supply with the radial taping
0.65±0.1
0.85±0.1
2.5±0.1
1.0±0.1 0.8 C
0.8 C.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
16.0±1.0
0.7±0.1 1.15±0.2
0.7±0.1 1.15±0.2
/ Collector-base voltage (Emitter open) VCBO
50
V
0.5±0.1
0.4±0.1
e Collector-emitter voltage (Base open) VCEO
40
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
1.5
A
le sta ntinu Peak collector cur.
Silicon NPN Triple Diffused Planar Type Power Transistors
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Power Transistors
2SC4545
Silicon NPN epitaxial planar type
For medium output power amplification
7.5±0.2
Unit: mm 4.5±0.2
3.8±0.2
■ Features
2.05±0.2 90˚
10.8±0.2
• Allowing supply with the radial taping
0.65±0.1
0.85±0.1
2.5±0.1
1.0±0.1 0.8 C
0.8 C
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
16.0±1.0
0.7±0.1 1.15±0.2
0.7±0.1 1.15±0.2
/ Collector-base voltage (Emitter open) VCBO
50
V
0.5±0.1
0.4±0.1
e Collector-emitter voltage (Base open) VCEO
40
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
1.5
A
le sta ntinu Peak collector current
ICP
3
A
a e cyc isco Collector power dissipation
PC
1.
2SC4545 Datasheet
