q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCER VCEO VEBO ICP IC
PC
1400 1400 700
5 1.0 0.3 20 1.4
Junction temperature Storage temperatur.
Silicon NPN Triple Diffused Planar Type Power Transistors
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Power Transistors
2SC4576
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCER VCEO VEBO ICP IC
PC
1400 1400 700
5 1.0 0.3 20 1.4
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V V A A
W
˚C ˚C
13.5±0.5 Solder Dip
15.4±0.3
2.8±0.2 1.5±0.2
10.5±0.5 9.5±0.2 8.0±0.2
4.5±0.2 1.4±0.1
6.7±0.3 2.8±0.
2SC4576 Datasheet
