Panasonic 2SC4953
NPN Transistor
FEATURES
● High-speed switching φ 3.2±0.1 15.0±0.5● High collector-base voltage (Emitter open) VCBO
● Wide safe operation area
● Satisfactory linearity of forward current transfer ratio hFE
● Dielectric breakdown voltage of the package: > 5 kV 1.4±0.2 1.6±0.2 2.6±0.1 /
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C 0.8±0.1 0.55±0.15 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 500 13.7±0.2 4.2±0.2 Solder Dip V c e. d ty Collector-emitter voltage (E-B short) VCES 500 V n d stag tinue Collector-emitter voltage (Base open) VCEO 400 V a e cle con Emitter-base voltage (Collector open) VEBO 7 V lifecy , dis Base current IB 1.2 A n u duct typed Collector current IC 3 A te tin Pro ed Peak collector current ICP 6 A ur tinu Collector power TC = 25°C PC 30 W ing fo iscon dissipation 2.0 in n llow d d Junction temperature s fo lane Storage temperature Tj 150 °C Tstg −55 to +150 °C 2.54±0.30 5.08±0.50 123 1: Base 2: Collector 3: Emitter TO-220D-A1 Package a coed inclucdeetyp...