Panasonic 2SC5294
Silicon NPN triple diffusion mesa type Power Transistor
FEATURES
φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 V 5° V 1 2 3 2.0 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package sELECTRICAL CHARACTERISTICS
Parameter 2SC5294 Collector cutoff current 2SC5294A 2SC5294 2SC5294A Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25˚C) Symbol Conditions VCB = 1000V, IE = 0 ICBO VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 IEBO hFE VCE(sat) VBE(sat) fT...