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Power Transistors
2SC5392
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
9.9±0.3
4.6±0.2
2.9±0.2
3.0±0.5
q High-speed switching
q High collector to base voltage VCBO q Wide area of safe operation (ASO)
φ3.2±0.1
q Satisfactory linearity of foward current transfer ratio hFE
q Dielectric breakdown voltage of the package: > 5kV
15.0±0.5
/ 1.4±0.2
2.6±0.1
1.6±0.2
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
13.7±0.2 4.2±0.2
n d tage. ued Collector to base voltage
VCBO
800
V
a e cle s contin Collector to emitter voltage
VCES
800
V
cy is VCEO
500
V
n u t life ed, d Emitter to base voltage
VEBO
8
V
duc typ Peak collector current
ICP
3.
2SC5392 Datasheet
