Panasonic 2SC5905
Silicon NPN Transistor
FEATURES
15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5● High breakdown voltage: VCBO ≥ 1 700 V
● High-speed switching: tf < 200 ns
● Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 1.1±0.1 0.7±0.1 5.45±0.3 Collector-base voltage (Emitter open) VCBO 1 700 V e e) Collector-emitter voltage (E-B short) VCES 1 700 V c typ Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 5.5±0.3 V n d stage. tinued Emitter-base voltage (Collector open) VEBO 7 (2.0) V le on Base current IB 8 A a elifecyc disc Collector current n u ct ped, Peak collector current * IC 20 A ICP 30 A rodu d ty Collector power dissipation PC 70 W te tin urP tinue Ta=25°C 3.5 g fo con Junction temperature Tj 150 °C in n llowin d dis Storage temperature Tstg −55 to +150 °C s fo lane Note) *: Non-repetitive peak collector current 10.9±0.5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A...