Panasonic 2SC5909
NPN Transistor
FEATURES
15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5● High breakdown voltage: VCBO ≥ 1 500 V
● High-speed switching: tf < 200 ns
● Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 (2.0) 5.5±0.3 V sta tinu Emitter-base voltage (Collector open) VEBO 7 V a e cycle iscon Base current IB 5 A life , d Collector current n u duct typed Peak collector current * IC 15 A ICP 25 A te tin Pro ed Collector power dissipation PC 50 W four ntinu Ta = 25°C 3 ing isco Junction temperature Tj 150 °C in n follow ed d Storage temperature Tstg −55 to +150 °C es plan Note) *: Non-repetitive peak collector current 10.9±0.5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E...