Panasonic 2SC5912
Silicon NPN triple diffusion mesa type Power Transistor
| Part No. | 2SC5912 |
|---|---|
| Datasheet | 2SC5912 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN triple diffusion mesa type Power Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage: VCBO ≥ 1 500 V● Wide safe operation area
● Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 500 1 500 7 3 10 15 40 3 150 −55 to +150 °C °C Unit V V V A A A W 3.3±0.3 18.6±0.5 (2.0) Solder Dip 5˚ 1 2 3 (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current●
ELECTRICAL CHARACTERISTICS
TC = 25°C ± 3°C Parameter Emitter-base voltage (Collector open) Forward voltage Collector-base cutoff current (Emitter open) Symbol VEBO VF ICBO hFE VCE(sat) VBE(sat) fT tstg tf IF = 5...
