2SC5914 - Silicon NPN Transistor

Product Overview

Panasonic

Part number	2SC5914
Manufacturer	Panasonic
File Size	224.15 KB
Description	Silicon NPN Transistor
Datasheet	2SC5914 Datasheet
Additional preview pages of the 2SC5914 datasheet.

s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
High breakdown voltage: VCBO ≥ 1 500 V.
High-speed switching: tf < 200 ns.
Wide safe operation area.
Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector-base voltage (Emitter open) VCBO 1 500 18.6±0.5 (2.0) Solder Dip V 5.45±0.3 e Collector-emitter voltage (E-B short) VCES 1 500 V c type) C.

📁 Similar Datasheet

2SC5912 - Silicon NPN triple diffusion mesa type Power Transistor (Panasonic Semiconductor)
2SC5913 - NPN TRANSISTOR (Panasonic Semiconductor)
2SC5915 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR (Sanyo Semicon Device)
2SC5916 - NPN TRANSISTOR (Rohm)
2SC5900 - NPN TRANSISTOR (Sanyo Semicon Device)
2SC5902 - NPN Transistor (INCHANGE)
2SC5904 - NPN Transistor (Panasonic Semiconductor)
2SC5905 - Silicon NPN Transistor (Panasonic Semiconductor)

Other Datasheets by Panasonic

Published: Oct 20, 2006 |