Panasonic 2SC5914
Silicon NPN Transistor
| Part No. | 2SC5914 |
|---|---|
| Datasheet | 2SC5914 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5● High breakdown voltage: VCBO ≥ 1 500 V
● High-speed switching: tf < 200 ns
● Wide safe operation area
●
ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector-base voltage (Emitter open) VCBO 1 500 18.6±0.5 (2.0) Solder Dip V 5.45±0.3 e Collector-emitter voltage (E-B short) VCES 1 500 V c type) Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 5.5±0.3 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 (2.0) V le sta ntinu Base current IB 5 A a e cyc isco Collector current IC 12 A life d, d Peak collector current * ICP 22 A n u duct type Collector power dissipation PC 40 W te tin Pro ued Ta=25°C 3 four ntin Junction temperature Tj 150 °C wing disco Storage temperature Tstg −55 to +150 °C in n follo ned Note) *: Non-repetitive peak collector current 10.9±0.5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Packa...
