2SC5914 - Silicon NPN Transistor

Panasonic

Key Features

s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
High breakdown voltage: VCBO ≥ 1 500 V.
High-speed switching: tf < 200 ns.
Wide safe operation area.
Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector-base voltage (Emitter open) VCBO 1 500 18.6±0.5 (2.0) Solder Dip V 5.45±0.3 e Collector-emitter voltage (E-B short) VCES 1 500 V c type) C.

2SC5914 silicon npn transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SC5914
Manufacturer	Panasonic
File Size	224.15 KB
Description	Silicon NPN Transistor
Datasheet	2SC5914 Datasheet

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Full PDF Text Transcription (Reference)

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Power Transistors 2SC5914 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector-base voltage (Emitter open) VCBO 1 500 18.6±0.5 (2.0) Solder Dip V 5.45±0.3 e Collector-emitter voltage (E-B short) VCES 1 500 V c type) Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 5.5±0.3 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 (2.