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2SC6037J - Silicon NPN Transistor

Key Features

  • Low collector-emitter saturation voltage VCE(sat) (0.375) 0.85.
  • +00..0035 1.60±0.05 5°.
  • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.80).
  • Absolute Maximum Ratings Ta = 25°C (0.50)(0.50) / Parameter Symbol Rating Unit Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c . typ Emitter-base voltage (Collector open) n d stage tinued Collector current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.60+−00..0053 1.00±0.05 Unit: mm 0.12+−00..0031 0.80±0.05  Features 3  Low collector-emitter saturation voltage VCE(sat) (0.375) 0.85−+00..0035 1.60±0.05 5°  SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 12 0.27±0.02 (0.80)  Absolute Maximum Ratings Ta = 25°C (0.50)(0.50) / Parameter Symbol Rating Unit Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c .