Panasonic 2SD0965
Silicon NPN Transistor
FEATURES
/● Low collector-emitter saturation voltage VCE(sat)
● Satisfactory operation performances at high efficiency with the low- e voltage power supply. c tage.
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C n d le s Parameter Symbol Rating Unit 0.7±0.2 12.9±0.5 yc Collector-base voltage (Emitter open) VCBO 40 V a e lifec Collector-emitter voltage (Base open) VCEO 20 V ct Emitter-base voltage (Collector open) VEBO 7 V n u rodu Collector current IC 5 A 2.3±0.2 P Peak collector current ICP 8 A te tin four Collector power dissipation PC 750 mW ing type n. Junction temperature Tj 150 °C in n llow e tio Storage temperature Tstg −55 to +150 °C 5.0±0.2 Unit: mm 4.0±0.2 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package a coed inclueddesmfaointteennaannccettiynpueed ttyyppeed test info.rjmp/aen/●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C u n in on d t la .co Parameter Symbol Conditions Min Typ Max Unit M is tin la a isc ue ou nic Coll...