Panasonic 2SD0966
Silicon NPN Transistor
FEATURES
● Low collector-emitter saturation voltage VCE(sat)● Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 8.6±0.2 0.45+0.2 –0.1 (1.27) 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Symbol VCEO VEBO ICBO IEBO hFE1 *2...