Panasonic 2SD1198
Silicon NPN Transistor
FEATURES
q 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 q q 0.85 (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to 2SD1198 2SD1198A 2SD1198 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg emitter voltage 2SD1198A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A A W ˚C ˚C ≈200Ω E B 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Internal Connection C Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1198 2SD1198A 2SD1198 2SD1198A 2SD1198 2SD1198A (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 Conditions VCB = 25V, IE = 0 VCB = 45V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IB = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE...