Panasonic 2SD1199
Silicon NPN Transistor
| Part No. | 2SD1199 |
|---|---|
| Datasheet | 2SD1199 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
q q q q q 1.5 R0.9 R0.9 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 2.4±0.2 2.0±0.2 3.5±0.1 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 0.55±0.1 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 3 2 (Ta=25˚C) Ratings 50 40 15 100 50 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC–71 M Type Mold Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation...