Panasonic 2SD1277
Silicon NPN Transistor
FEATURES
φ3.1±0.1 4.0 14.0±0.5 sABSOLUTE MAXIMUM RATINGS
(TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150 –55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 Collector to base voltage Collector to 2.54±0.25 5.08±0.5 emitter voltage 2SD1277A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1277 2SD1277A 2SD1277 2SD1277A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC =...