Panasonic 2SD2184
Silicon NPN Transistor
FEATURES
q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 150 150 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board +0.1 sABSOLUTE MAXIMUM RATINGS
0.45–0.05 +0.1 (Ta=25˚C) 2.5±0.5 2.5±0.5 (HW type) sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltag...