2SD2659 - Silicon NPN triple diffusion planar type Transistor

Panasonic

Key Features

s.
High forward current transfer ratio hFE.
Satisfactory linearity of forward current transfer ratio hFE.
TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1.
Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collecto.

2SD2659 silicon npn triple diffusion planar type transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SD2659
Manufacturer	Panasonic
File Size	82.23 KB
Description	Silicon NPN triple diffusion planar type Transistor
Datasheet	2SD2659 Datasheet

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Power Transistors 2SD2659 Silicon NPN triple diffusion planar type Unit: mm For power switching ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 20 2 150 −55 to +150 °C °C Unit V 0.55±0.15 2.