Panasonic 2SK1103
Silicon N-Channel Junction FET
| Part No. | 2SK1103 |
|---|---|
| Datasheet | 2SK1103 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-Channel Junction FET |
| Buy | Stock & Price |
FEATURES
2.9 –0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4 –0.05 +0.1 sABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −65 20 10 150 150 −55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1 –0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): 4L sELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −10µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz 1.8 −65 −1.5 2.5 300 7 1.5 −3.5 min 0.2 typ max 6 −10 Unit mA n...