Panasonic 2SK1104
Silicon N-Channel Junction FET
| Part No. | 2SK1104 |
|---|---|
| Datasheet | 2SK1104 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-Channel Junction FET |
| Buy | Stock & Price |
FEATURES
q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 sABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings −65 20 10 300 150 −55 to +150 Unit V mA mA mW °C °C 1.27 1.27 1 2 3 2.0±0.2 marking +0.2 0.45–0.1 2.54±0.15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package sELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −10µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz 1.8 −65 −1.5 2.5 250 7 1.3 1.5 −3.5 min 0.2 typ max 6 −10 Unit mA nA V V mS Ω pF pF pF Input cap...