q Low
5.3±0.1 4.35±0.1 3.0±0.1
ON-resistance RDS(on) switching
q High-speed
0.2max. 5.5±0.1
7.3±0.1
0.8max. 9.8±0.1 1.0±0.2
1.0±0.1
0.85±0.1
0.75±0.1
0.5±0.1 0.05 to 0.15
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP Tch Tstg.
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Power F-MOS FETs
2SK2276
2SK2276
Silicon N-Channel MOS
For switching
6.5±0.1
1.8±0.1 2.5±0.1
Unit : mm
s Features
q Low
5.3±0.1 4.35±0.1 3.0±0.1
ON-resistance RDS(on) switching
q High-speed
0.2max.
5.5±0.1
7.3±0.1
0.8max.
9.8±0.1 1.0±0.2
1.0±0.1
0.85±0.1
0.75±0.1
0.5±0.1 0.05 to 0.15
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP Tch Tstg
*1
4.6±0.1
Rating 60 ±20 ±3 ±5 10 150 –55 to +150
Unit V V A A W ˚C ˚C
G
1 2 3 Marking
2.3±0.
2SK2276 Datasheet
