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Power F-MOS FETs
2SK2377
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive
s Applications
q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Symbol
Rating
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
VDSS VGSS ID IDP EAS *
170 ±20 ±20 ±40 200
Allowable power dissipation
TC= 25˚C Ta= 25˚C
PD
50 2
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
* L=1mH, IL= 20A, 1 pulse
Unit V V A A mJ
W
˚C ˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Sour
2SK2377 Datasheet
