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Silicon MOSFET
2SK3559
N-channel enhancement mode MOSFET
High speed switching
Absolute Maximum Ratings
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Allowable power Tc = 25 °C *1
dissipation
Ta = 25 °C *2
Junction temperature
Storage temperature
Symbol VDSS VGSS ID IDP PD PD Tj Tstg
Rating 230
30 30 120 100 3 150 -55 to +150
*1 : Tc = 25 °C *2 : Ta = 25 °C (Without heat sink )
Unit V V A A
W W °C °C
16.2±0.5 (3.2) (2.3)
Solder Dip
21.0±0.5 15.0±0.2
(0.7)
15.0±0.3 11.0±0.2
Unit : mm
5.0±0.2 (3.2)
φ 3.2±0.1
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
5.45±0.3 10.9±0.
2SK3559 Datasheet
